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PSMN6R0-30YLDX
PSMN6R0-30YLDX
MOSFETs PSMN6R0-30YLDX
Nexperia
PSMN6R0-30YLDX
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width4.1(Max)
Package Height1.1(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageLFPAK
Maximum IDSS (uA)1
Process TechnologyNextPower
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10.9
Typical Rise Time (ns)16.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)47000
Typical Gate Charge @ 10V (nC)13.7
Typical Gate Charge @ Vgs (nC)13.7@10V|12.2@10V|6.5@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)10.5
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)66
Typical Input Capacitance @ Vds (pF)832@15V
Maximum Drain Source Resistance (mOhm)6@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 66A 5-Pin(4+Tab) LFPAK T/R
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