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PSMN0R9-30ULDX
PSMN0R9-30ULDX
MOSFETs PSMN0R9-30ULDX
Nexperia
PSMN0R9-30ULDX
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyNextPowerS3
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)42.6
Typical Rise Time (ns)49.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)227000
Typical Gate Charge @ 10V (nC)109
Typical Gate Charge @ Vgs (nC)109@10V|51@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)38.1
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)63
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)300
Typical Input Capacitance @ Vds (pF)7668@15V
Maximum Drain Source Resistance (mOhm)0.87@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 300A
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