Product Attribute | Attribute Value |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Triple Source |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Process Technology | NextPowerS3 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 42.6 |
Typical Rise Time (ns) | 49.8 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 227000 |
Typical Gate Charge @ 10V (nC) | 109 |
Typical Gate Charge @ Vgs (nC) | 109@10V|51@4.5V |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 38.1 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 63 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 300 |
Typical Input Capacitance @ Vds (pF) | 7668@15V |
Maximum Drain Source Resistance (mOhm) | 0.87@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |