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PMPB33XP,115
PMPB33XP,115
MOSFETs PMPB33XP,115
Nexperia
PMPB33XP,115
--
Diodes, Transistors and Thyristors
MOSFETs
PMPB33XP,115.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2.1(Max)
Package Height0.61(Max)
Package Length2.1(Max)
Product CategoryPower MOSFET
Supplier PackageDFN-MD EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameDFN
Typical Fall Time (ns)23
Typical Rise Time (ns)42
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ Vgs (nC)15@4.5V
Maximum Gate Source Voltage (V)12
Typical Output Capacitance (pF)145
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.375
Typical Turn-Off Delay Time (ns)62
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.6
Typical Gate to Drain Charge (nC)4
Maximum Gate Threshold Voltage (V)0.9
Minimum Gate Threshold Voltage (V)0.47
Typical Gate Threshold Voltage (V)0.68
Typical Gate to Source Charge (nC)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1575@10V
Maximum Drain Source Resistance (mOhm)37@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)22
Maximum Power Dissipation on PCB @ TC=25°C (W)3.5
Typical Reverse Transfer Capacitance @ Vds (pF)125@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)5.5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)270
Description
Trans MOSFET P-CH 20V 5.5A 6-Pin DFN-MD EP T/R
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