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NXH010P120MNF1PTG
NXH010P120MNF1PTG
MOSFETs NXH010P120MNF1PTG
onsemi
NXH010P120MNF1PTG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MaterialSiC
ECCN (US)EAR99
PackagingTray
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Typical Fall Time (ns)9.8
Typical Rise Time (ns)16.2
Number of Elements per Chip2
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ Vgs (nC)454@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)44.2
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)136.6
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)114
Operating Junction Temperature (°C)-40 to 175
Typical Input Capacitance @ Vds (pF)4707@800V
Maximum Drain Source Resistance (MOhm)14@20V
Description
Trans MOSFET N-CH SiC 1.2KV 114A Tray
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