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NX3008PBKW,115
NX3008PBKW,115
MOSFETs NX3008PBKW,115
Nexperia
NX3008PBKW,115
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Product CategorySmall Signal
Supplier PackageSC-70
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)38
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)310
Typical Gate Charge @ Vgs (nC)0.55@4.5V
Maximum Gate Source Voltage (V)8
Typical Output Capacitance (pF)6.5
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.6
Typical Turn-Off Delay Time (ns)65
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.88
Typical Gate to Drain Charge (nC)0.09
Maximum Gate Threshold Voltage (V)1.1
Minimum Gate Threshold Voltage (V)0.6
Typical Gate Threshold Voltage (V)0.9
Typical Gate to Source Charge (nC)0.23
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)31@15V
Maximum Drain Source Resistance (mOhm)4100@4.5V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)0.8
Maximum Power Dissipation on PCB @ TC=25°C (W)0.31
Typical Reverse Transfer Capacitance @ Vds (pF)2.3@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)480
Description
Trans MOSFET P-CH 30V 0.2A Automotive 3-Pin SC-70 T/R
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