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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NVBG020N090SC1
NVBG020N090SC1
MOSFETs NVBG020N090SC1
onsemi
NVBG020N090SC1
--
Diodes, Transistors and Thyristors
MOSFETs
NVBG020N090SC1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed7
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width9.2
Package Height4.5
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageD2PAK
Typical Fall Time (ns)13
Typical Rise Time (ns)52
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ Vgs (nC)200@15V
Maximum Gate Source Voltage (V)19
Typical Turn-On Delay Time (ns)39
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)58
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.8
Typical Input Capacitance @ Vds (pF)4415@450V
Maximum Drain Source Resistance (mOhm)28@15V
Description
Trans MOSFET N-CH SiC 900V 9.8A 8-Pin(7+Tab) D2PAK T/R
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