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NVB5426NT4G
NVB5426NT4G
MOSFETs NVB5426NT4G
onsemi
NVB5426NT4G
--
Diodes, Transistors and Thyristors
MOSFETs
NVB5426NT4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)95
Typical Rise Time (ns)100
Number of Elements per Chip1
Maximum Power Dissipation (mW)215000
Typical Gate Charge @ 10V (nC)150
Typical Gate Charge @ Vgs (nC)150@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1000
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)5.8
Typical Turn-Off Delay Time (ns)105
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.88
Typical Gate to Drain Charge (nC)67
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)3.1
Typical Gate to Source Charge (nC)28
Typical Reverse Recovery Time (ns)75
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)120
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)5800@25V
Typical Reverse Recovery Charge (nC)235000
Maximum Drain Source Resistance (mOhm)6@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)260
Maximum Power Dissipation on PCB @ TC=25°C (W)215
Typical Reverse Transfer Capacitance @ Vds (pF)370@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)120
Description
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
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