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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NVATS68301PZT4G
NVATS68301PZT4G
MOSFETs NVATS68301PZT4G
onsemi
NVATS68301PZT4G
--
Diodes, Transistors and Thyristors
MOSFETs
NVATS68301PZT4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveYes
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width7.3
Package Height1.5
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageATPAK
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)170
Typical Rise Time (ns)150
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)84000
Typical Gate Charge @ 10V (nC)55
Typical Gate Charge @ Vgs (nC)55@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)250
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)2850@20V
Maximum Drain Source Resistance (mOhm)75@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH 100V 31A Automotive 3-Pin(2+Tab) ATPAK T/R
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