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NTR2101PT1G
NTR2101PT1G
MOSFETs NTR2101PT1G
Murata
NTR2101PT1G
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Diodes, Transistors and Thyristors
MOSFETs
NTR2101PT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Product CategorySmall Signal
Process TechnologyTMOS
Typical Fall Time (ns)31
Typical Rise Time (ns)15.75
Number of Elements per Chip1
Maximum Power Dissipation (mW)960
Typical Gate Charge @ Vgs (nC)12@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)7.4
Maximum Drain Source Voltage (V)8
Typical Turn-Off Delay Time (ns)38
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.7
Typical Input Capacitance @ Vds (pF)1173@4V
Maximum Drain Source Resistance (mOhm)52@4.5V
Description
Trans MOSFET P-CH 8V 3.7A 3-Pin SOT-23 T/R
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