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MOSFETs NTMFSC010N08M7
onsemi
NTMFSC010N08M7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3300 |
| Typical Gate Charge @ 10V (nC) | 29.3 |
| Typical Gate Charge @ Vgs (nC) | 2.1@1V|8.6@4V|6.4@3V|9.6@5V|18.7@6V|21.3@7V|24@8V|26.6@9V|29.3@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 27 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12.5 |
| Typical Input Capacitance @ Vds (pF) | 2373@0V|2080@40V |
| Maximum Drain Source Resistance (MOhm) | 10@10V |
| Description |
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