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NTMFS3D2N10MDT1G
NTMFS3D2N10MDT1G
MOSFETs NTMFS3D2N10MDT1G
onsemi
NTMFS3D2N10MDT1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyShielded Gate MOS
Typical Fall Time (ns)6.3
Typical Rise Time (ns)7.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ 10V (nC)48
Typical Gate Charge @ Vgs (nC)29@6V|48@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)26.1
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)39
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)3900@50V
Maximum Drain Source Resistance (mOhm)3.5@10V
Description
Trans MOSFET N-CH 100V 19A T/R
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