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NTHS4101PT1G
NTHS4101PT1G
MOSFETs NTHS4101PT1G
onsemi
NTHS4101PT1G
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Diodes, Transistors and Thyristors
MOSFETs
NTHS4101PT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeFlat
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Hex Drain
Package Width1.65
Package Height1.05
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageChip FET
Maximum IDSS (uA)1
Standard Package NameChip FET
Typical Fall Time (ns)60
Typical Rise Time (ns)28
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)25@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)290
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.5
Typical Turn-Off Delay Time (ns)75
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)7
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.45
Typical Gate to Source Charge (nC)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.8
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)2100@16V
Maximum Drain Source Resistance (MOhm)34@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)190
Typical Reverse Transfer Capacitance @ Vds (pF)200@16V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)95
Description
Trans MOSFET P-CH 20V 4.8A 8-Pin Chip FET T/R
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