Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant with Exemption |
Material | SiC |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Typical Fall Time (ns) | 9 |
Typical Rise Time (ns) | 51 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 348000 |
Typical Gate Charge @ Vgs (nC) | 164@18V |
Maximum Gate Source Voltage (V) | 22 |
Typical Turn-On Delay Time (ns) | 18 |
Maximum Drain Source Voltage (V) | 650 |
Typical Turn-Off Delay Time (ns) | 34 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 99 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 3480@325V |
Maximum Drain Source Resistance (MOhm) | 28.5@18V |
Description |