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NTD4858N-1G
NTD4858N-1G
MOSFETs NTD4858N-1G
onsemi
NTD4858N-1G
--
Diodes, Transistors and Thyristors
MOSFETs
NTD4858N-1G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.38(Max)
Package Height6.35(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5.1|2.8
Typical Rise Time (ns)20.2|17.3
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)25.7
Typical Gate Charge @ Vgs (nC)12.8@4.5V|25.7@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)405
Typical Turn-On Delay Time (ns)12.6|7.7
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)16.4|23.8
Typical Gate to Drain Charge (nC)5.2
Maximum Gate Threshold Voltage (V)2.5
Typical Gate to Source Charge (nC)4.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)1563@12V
Typical Reverse Recovery Charge (nC)3
Maximum Drain Source Resistance (mOhm)6.2@10V
Description
Trans MOSFET N-CH 25V 14A 3-Pin(3+Tab) IPAK Tube
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