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NDS355N
NDS355N
MOSFETs NDS355N
onsemi
NDS355N
--
Diodes, Transistors and Thyristors
MOSFETs
NDS355N.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameSOT
Typical Fall Time (ns)4
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)3.5@5V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)130
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)12
Maximum Diode Forward Voltage (V)1.2
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.6
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)245@10V
Maximum Drain Source Resistance (MOhm)85@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)10
Maximum Power Dissipation on PCB @ TC=25°C (W)0.5
Typical Reverse Transfer Capacitance @ Vds (pF)20@10V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)270
Description
Trans MOSFET N-CH 30V 1.6A 3-Pin SOT-23 T/R
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