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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NDD60N360U1-1G
NDD60N360U1-1G
MOSFETs NDD60N360U1-1G
onsemi
NDD60N360U1-1G
--
Diodes, Transistors and Thyristors
MOSFETs
NDD60N360U1-1G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.38(Max)
Package Height6.35(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)114000
Typical Gate Charge @ 10V (nC)29
Typical Gate Charge @ Vgs (nC)29@10V
Maximum Gate Source Voltage (V)±25
Maximum Drain Source Voltage (V)600
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)800@50V
Maximum Drain Source Resistance (MOhm)360@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
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