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MOSFETs LND150N3-G-P013
Microchip Technology
LND150N3-G-P013
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Ammo |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.19(Max) |
| Package Height | 5.33(Max) |
| Package Length | 5.21(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-92 |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 1300 |
| Typical Rise Time (ns) | 450 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 740 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 90 |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.03 |
| Typical Input Capacitance @ Vds (pF) | 7.5@25V |
| Maximum Drain Source Resistance (MOhm) | 1000000@0V |
| Description |
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