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MOSFETs JANSF2N7519U3
Infineon
JANSF2N7519U3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Supplier Unconfirmed |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | Contact Export |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 10.28(Max) |
| Package Height | 2.61(Max) |
| Package Length | 7.64(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SMD-0.5 |
| Maximum IDSS (uA) | 10 |
| Typical Fall Time (ns) | 70 |
| Typical Rise Time (ns) | 10 |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 75000 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 25 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 22 |
| Maximum Drain Source Resistance (MOhm) | 84@12V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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