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MOSFETs ISP650P06NMXTSA1
Infineon
ISP650P06NMXTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Product Category | Small Signal |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 14 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1800 |
| Typical Gate Charge @ 10V (nC) | 39 |
| Typical Gate Charge @ Vgs (nC) | 39@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 37 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.7 |
| Typical Input Capacitance @ Vds (pF) | 1600@30V |
| Maximum Drain Source Resistance (MOhm) | 65@10V |
| Description |
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