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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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ISC010N06NM5ATMA1
ISC010N06NM5ATMA1
MOSFETs ISC010N06NM5ATMA1
Infineon
ISC010N06NM5ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
ISC010N06NM5ATMA1.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
PackagingTape and Reel
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyOptiMOS 5
Typical Fall Time (ns)31
Typical Rise Time (ns)15
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)115
Typical Gate Charge @ Vgs (nC)115@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)54
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)39
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)8300@30V
Maximum Drain Source Resistance (MOhm)1.05@10V
Description
Trans MOSFET N-CH 60V 39A T/R
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