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MOSFETs IRLU2905HR
Infineon
IRLU2905HR
--
Diodes, Transistors and Thyristors
MOSFETs
IRLU2905HR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MaterialSi
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyHEXFET
Typical Fall Time (ns)15
Typical Rise Time (ns)84
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Typical Gate Charge @ Vgs (nC)48(Max)@5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)26
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)42
Typical Input Capacitance @ Vds (pF)1700@25V
Maximum Drain Source Resistance (MOhm)27@10V
Description
Trans MOSFET N-CH Si 55V 42A 3-Pin(3+Tab)
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