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IRLR024N
IRLR024N
MOSFETs IRLR024N
Infineon
IRLR024N
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR024N.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)29
Typical Rise Time (ns)74
Number of Elements per Chip1
Maximum Power Dissipation (mW)45000
Typical Gate Charge @ Vgs (nC)15(Max)@5V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)130
Typical Turn-On Delay Time (ns)7.1
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)20
Typical Gate to Drain Charge (nC)8.5(Max)
Maximum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)3.7(Max)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17
Typical Input Capacitance @ Vds (pF)480@25V
Typical Reverse Recovery Charge (nC)130
Maximum Drain Source Resistance (mOhm)65@10V
Description
Trans MOSFET N-CH Si 55V 17A 3-Pin(2+Tab) DPAK T/R
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