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IRLMS2002TR
IRLMS2002TR
MOSFETs IRLMS2002TR
Infineon
IRLMS2002TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRLMS2002TR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width1.75(Max)
Package Height1.3(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageTSOP
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)16
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)15@5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)150
Typical Turn-On Delay Time (ns)8.5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)36
Typical Gate to Drain Charge (nC)3.5
Maximum Gate Threshold Voltage (V)1.2
Typical Gate to Source Charge (nC)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)1310@15V
Typical Reverse Recovery Charge (nC)13
Maximum Drain Source Resistance (mOhm)30@4.5V
Description
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R
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