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IRLML0060TRPBF
IRLML0060TRPBF
MOSFETs IRLML0060TRPBF
Infineon
IRLML0060TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameSOT
Typical Fall Time (ns)4.2
Typical Rise Time (ns)6.3
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)2.5@4.5V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)37
Typical Turn-On Delay Time (ns)5.4
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3.5
Typical Turn-Off Delay Time (ns)6.8
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)1.3
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)0.7
Typical Reverse Recovery Time (ns)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)290@25V
Typical Reverse Recovery Charge (nC)13
Maximum Drain Source Resistance (MOhm)92@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)16
Maximum Pulsed Drain Current @ TC=25°C (A)11
Typical Reverse Transfer Capacitance @ Vds (pF)21@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)100
Description
Trans MOSFET N-CH 60V 2.7A 3-Pin SOT-23 T/R
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