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MOSFETs IRLM120ATF
onsemi
IRLM120ATF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | LTB |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain |
| Product Category | Power MOSFET |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 10 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2700 |
| Typical Gate Charge @ Vgs (nC) | 10.2@5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.3 |
| Typical Input Capacitance @ Vds (pF) | 340@25V |
| Maximum Drain Source Resistance (MOhm) | 220@5V |
| Description |
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