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MOSFETs IRLI520NHR
Infineon
IRLI520NHR
--
Diodes, Transistors and Thyristors
MOSFETs
IRLI520NHR.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
MaterialSi
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyHEXFET
Typical Fall Time (ns)22
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)30000
Typical Gate Charge @ Vgs (nC)20(Max)@5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)40
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)23
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.1
Typical Input Capacitance @ Vds (pF)440@25V
Maximum Drain Source Resistance (MOhm)180@10V
Description
Trans MOSFET N-CH Si 100V 8.1A 3-Pin(3+Tab)
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