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IRLD024PBF
IRLD024PBF
MOSFETs IRLD024PBF
Vishay
IRLD024PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRLD024PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeThrough Hole
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width6.29(Max)
Package Height3.37(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageHVMDIP
Maximum IDSS (uA)25
Standard Package NameDIP
Typical Fall Time (ns)41
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ Vgs (nC)18(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)23
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5
Typical Input Capacitance @ Vds (pF)870@25V
Maximum Drain Source Resistance (mOhm)100@5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
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