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MOSFETs IRFR220NHR
Infineon
IRFR220NHR
--
Diodes, Transistors and Thyristors
MOSFETs
IRFR220NHR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyHEXFET
Typical Fall Time (ns)12
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)43000
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.4
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5
Typical Input Capacitance @ Vds (pF)300@25V
Maximum Drain Source Resistance (MOhm)600@10V
Description
Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab)
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