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IRFR120NHR
IRFR120NHR
MOSFETs IRFR120NHR
Infineon
IRFR120NHR
--
Diodes, Transistors and Thyristors
MOSFETs
IRFR120NHR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)25
Process TechnologyHEXFET
Typical Fall Time (ns)23
Typical Rise Time (ns)23
Number of Elements per Chip1
Maximum Power Dissipation (mW)48000
Typical Gate Charge @ 10V (nC)25(Max)
Typical Gate Charge @ Vgs (nC)25(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)32
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.4
Typical Input Capacitance @ Vds (pF)330@25V
Maximum Drain Source Resistance (MOhm)210@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 100V 9.4A
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