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IRFPS37N50APBF
IRFPS37N50APBF
MOSFETs IRFPS37N50APBF
Infineon
IRFPS37N50APBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)80
Typical Rise Time (ns)98
Number of Elements per Chip1
Maximum Power Dissipation (mW)446000
Typical Gate Charge @ 10V (nC)180(Max)
Typical Gate Charge @ Vgs (nC)180(Max)@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)23
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)52
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36
Typical Input Capacitance @ Vds (pF)5579@25V
Maximum Drain Source Resistance (mOhm)130@10V
Description
Trans MOSFET N-CH 500V 36A 3-Pin Super-247
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