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IRFBF30
IRFBF30
MOSFETs IRFBF30
Vishay
IRFBF30
--
Diodes, Transistors and Thyristors
MOSFETs
IRFBF30.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.01(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)30
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)78(Max)
Typical Gate Charge @ Vgs (nC)78(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)90
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.6
Typical Input Capacitance @ Vds (pF)1200@25V
Maximum Drain Source Resistance (MOhm)3700@10V
Description
Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB
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