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IRF7902PBF
IRF7902PBF
MOSFETs IRF7902PBF
Infineon
IRF7902PBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF7902PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)3.4@Q 1|3.3@Q 2
Typical Rise Time (ns)8.2@Q 1|8.6@Q 2
Typical Switch Charge (nC)2.3@Q 1|3.1@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)1400@Q 1|2000@Q 2
Typical Gate Charge @ Vgs (nC)4.6@4.5V@Q 1|6.5@4.5V@Q 2
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)130@Q 1|190@Q 2
Typical Turn-On Delay Time (ns)7.4@Q 1|6.1@Q 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)8.4@Q 1|8.2@Q 2
Typical Gate to Drain Charge (nC)1.8@Q 1|2.3@Q 2
Maximum Gate Threshold Voltage (V)2.25
Typical Gate to Source Charge (nC)0.9@Q 1|1.4@Q 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.4@Q 1|9.7@Q 2
Typical Input Capacitance @ Vds (pF)580@15V@Q 1|900@15V@Q 2
Typical Reverse Recovery Charge (nC)1.5@Q 1|3.1@Q 2
Maximum Drain Source Resistance (MOhm)22.6@10V@Q 1|14.4@10V@Q 2
Description
Trans MOSFET N-CH 30V 6.4A/9.7A 8-Pin SOIC Tube
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