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IRF7862PBF
IRF7862PBF
MOSFETs IRF7862PBF
Infineon
IRF7862PBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF7862PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)11
Typical Rise Time (ns)19
Typical Switch Charge (nC)12.9
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)1.6
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)30@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)810
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.9
Typical Turn-Off Delay Time (ns)18
Maximum Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)9.8
Maximum Gate Threshold Voltage (V)2.35
Minimum Gate Threshold Voltage (V)1.35
Typical Gate to Source Charge (nC)7.5
Typical Reverse Recovery Time (ns)17
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)4090@15V
Typical Reverse Recovery Charge (nC)33
Maximum Drain Source Resistance (mOhm)3.3@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)170
Typical Reverse Transfer Capacitance @ Vds (pF)390@15V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 30V 21A 8-Pin SOIC N Tube
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