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IRF7820PBF
IRF7820PBF
MOSFETs IRF7820PBF
Infineon
IRF7820PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7820PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)12
Typical Rise Time (ns)3.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)29
Typical Gate Charge @ Vgs (nC)29@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.1
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)14
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.7
Typical Input Capacitance @ Vds (pF)1750@100V
Maximum Drain Source Resistance (mOhm)78@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC Tube
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