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IRF7703PBF
IRF7703PBF
MOSFETs IRF7703PBF
Infineon
IRF7703PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7703PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)77
Typical Rise Time (ns)405
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)41@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)43
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)155
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)5220@25V
Maximum Drain Source Resistance (MOhm)28@10V
Description
Trans MOSFET P-CH Si 40V 6A 8-Pin TSSOP
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