Product Attribute | Attribute Value |
PPAP | No |
Material | Si |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | HEXFET |
Typical Fall Time (ns) | 35 |
Typical Rise Time (ns) | 35 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 130000 |
Typical Gate Charge @ 10V (nC) | 71(Max) |
Typical Gate Charge @ Vgs (nC) | 71(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 11 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 39 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 33 |
Typical Input Capacitance @ Vds (pF) | 1960@25V |
Maximum Drain Source Resistance (MOhm) | 44@10V |
Description |