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IRC530PBF
IRC530PBF
MOSFETs IRC530PBF
Vishay
IRC530PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRC530PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width4.82(Max)
Package Height9.02(Max)
Package Length10.66(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)25
Typical Rise Time (ns)42
Number of Elements per Chip1
Maximum Power Dissipation (mW)88000
Typical Gate Charge @ 10V (nC)26(Max)
Typical Gate Charge @ Vgs (nC)26(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)700@25V
Maximum Drain Source Resistance (mOhm)160@10V
Description
Trans MOSFET N-CH 100V 14A 5-Pin(5+Tab) TO-220
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