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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IPW65R080CFDA
IPW65R080CFDA
MOSFETs IPW65R080CFDA
Infineon
IPW65R080CFDA
--
Diodes, Transistors and Thyristors
MOSFETs
IPW65R080CFDA.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height21.1(Max)
Package Length16.13(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)2
Process TechnologyCoolMOS
Standard Package NameTO-247
Typical Fall Time (ns)6
Typical Rise Time (ns)18
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)391000
Typical Gate Charge @ 10V (nC)161
Typical Gate Charge @ Vgs (nC)161@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)85
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)43.3
Typical Input Capacitance @ Vds (pF)4440@100V
Maximum Drain Source Resistance (MOhm)80@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
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