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IPU80R4K5P7
IPU80R4K5P7
MOSFETs IPU80R4K5P7
Infineon
IPU80R4K5P7
--
Diodes, Transistors and Thyristors
MOSFETs
IPU80R4K5P7.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.41(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Process TechnologyCoolMOS P7
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)80
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)13000
Typical Gate Charge @ 10V (nC)4
Typical Gate Charge @ Vgs (nC)4@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)60
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.5
Typical Input Capacitance @ Vds (pF)80@500V
Maximum Drain Source Resistance (mOhm)4500@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 800V 1.5A 3-Pin(3+Tab) IPAK Tube
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