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IPTC015N10NM5ATMA1
IPTC015N10NM5ATMA1
MOSFETs IPTC015N10NM5ATMA1
Infineon
IPTC015N10NM5ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Octal Drain Seven Source
Product CategoryPower MOSFET
Process TechnologyOptiMOS 5
Typical Fall Time (ns)48
Typical Rise Time (ns)15
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)166
Typical Gate Charge @ Vgs (nC)166@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)29
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)70
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)12000@50V
Maximum Drain Source Resistance (MOhm)1.5@10V
Description
OptiMOS™ 5 power MOSFET in TOLT
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