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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IPT60R050G7XTMA1
IPT60R050G7XTMA1
MOSFETs IPT60R050G7XTMA1
Infineon
IPT60R050G7XTMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IPT60R050G7XTMA1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Package Width10.38
Package Height2.3
Package Length9.8
Product CategoryPower MOSFET
Supplier PackageHSOF
Maximum IDSS (uA)1
Process TechnologyCoolMOS G7
Typical Fall Time (ns)3
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)245000
Typical Gate Charge @ 10V (nC)68
Typical Gate Charge @ Vgs (nC)68@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)22
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)72
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)44
Typical Input Capacitance @ Vds (pF)2670@400V
Maximum Drain Source Resistance (MOhm)50@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 44A 9-Pin(8+Tab) HSOF T/R
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