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IPS70R900P7S
IPS70R900P7S
MOSFETs IPS70R900P7S
Infineon
IPS70R900P7S
--
Diodes, Transistors and Thyristors
MOSFETs
IPS70R900P7S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyCoolMOS P7
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)31
Typical Rise Time (ns)4.7
Number of Elements per Chip1
Maximum Power Dissipation (mW)30500
Typical Gate Charge @ 10V (nC)6.8
Typical Gate Charge @ Vgs (nC)6.8@10V
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)700
Typical Turn-Off Delay Time (ns)58
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)211@400V
Maximum Drain Source Resistance (mOhm)900@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 700V 6A Tube
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