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IPG20N06S4L11TMA1
IPG20N06S4L11TMA1
MOSFETs IPG20N06S4L11TMA1
Infineon
IPG20N06S4L11TMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)19
Typical Rise Time (ns)3
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)65000
Typical Gate Charge @ 10V (nC)41
Typical Gate Charge @ Vgs (nC)41@10V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)58
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)3090@25V
Maximum Drain Source Resistance (mOhm)11.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R
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