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IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
MOSFETs IPD60R180P7SAUMA1
Infineon
IPD60R180P7SAUMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyCoolMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)72000
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)19
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)5.2
Typical Turn-Off Delay Time (ns)85
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)8
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)3
Typical Gate Threshold Voltage (V)3.5
Typical Gate to Source Charge (nC)6
Typical Reverse Recovery Time (ns)175
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)18
Operating Junction Temperature (°C)-40 to 150
Typical Input Capacitance @ Vds (pF)1081@400V
Typical Reverse Recovery Charge (nC)1300
Maximum Drain Source Resistance (MOhm)180@10V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)53
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62
Description
Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R
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