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IPD25DP06LMATMA1
IPD25DP06LMATMA1
MOSFETs IPD25DP06LMATMA1
Infineon
IPD25DP06LMATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)3
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)28000
Typical Gate Charge @ 10V (nC)13.8
Typical Gate Charge @ Vgs (nC)13.8@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)3
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)420@30V
Maximum Drain Source Resistance (MOhm)250@10V
Description
Trans MOSFET P-CH 60V 6.5A T/R
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