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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IPC60N04S406ATMA1
IPC60N04S406ATMA1
MOSFETs IPC60N04S406ATMA1
Infineon
IPC60N04S406ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IPC60N04S406ATMA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON
Maximum IDSS (uA)1
Process TechnologyOptiMOS-T2
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6
Typical Rise Time (ns)5
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)63000
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)6
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)60
Typical Input Capacitance @ Vds (pF)2040@25V
Maximum Drain Source Resistance (MOhm)6@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 40V 60A Automotive 8-Pin TDSON T/R
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