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MOSFETs IPB65R660CFDAATMA1
Infineon
IPB65R660CFDAATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.45(Max) |
| Package Height | 4.57(Max) |
| Package Length | 10.31(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | CoolMOS |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 8 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 62500 |
| Typical Gate Charge @ 10V (nC) | 20 |
| Typical Gate Charge @ Vgs (nC) | 20@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 9 |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 6 |
| Typical Input Capacitance @ Vds (pF) | 543@100V |
| Maximum Drain Source Resistance (MOhm) | 660@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 17 |
| Description |
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