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IPB60R055CFD7ATMA1
IPB60R055CFD7ATMA1
MOSFETs IPB60R055CFD7ATMA1
Infineon
IPB60R055CFD7ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyCoolMOS CFD7
Typical Fall Time (ns)5
Typical Rise Time (ns)27
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)178000
Typical Gate Charge @ 10V (nC)79
Typical Gate Charge @ Vgs (nC)79@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)98
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)38
Typical Input Capacitance @ Vds (pF)3194@400V
Maximum Drain Source Resistance (MOhm)550@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 38A T/R
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