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IPB081N06L3GATMA1
IPB081N06L3GATMA1
MOSFETs IPB081N06L3GATMA1
Infineon
IPB081N06L3GATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7
Typical Rise Time (ns)26
Typical Switch Charge (nC)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)79000
Typical Gate Charge @ Vgs (nC)22@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)690
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3.8
Typical Turn-Off Delay Time (ns)37
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)5
Maximum Gate Threshold Voltage (V)2.2
Minimum Gate Threshold Voltage (V)1.2
Typical Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)14
Typical Reverse Recovery Time (ns)40
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3700@30V
Typical Reverse Recovery Charge (nC)39
Maximum Drain Source Resistance (mOhm)8.1@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)200
Typical Reverse Transfer Capacitance @ Vds (pF)31@30V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
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