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MOSFETs IPB039N10N3GE8187ATMA1
Infineon
IPB039N10N3GE8187ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Automotive | No |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quint Source |
| Product Category | Power MOSFET |
| Process Technology | OptiMOS 3 |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 59 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 214000 |
| Typical Gate Charge @ 10V (nC) | 88 |
| Typical Gate Charge @ Vgs (nC) | 88@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 27 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 48 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 160 |
| Typical Input Capacitance @ Vds (pF) | 6320@50V |
| Maximum Drain Source Resistance (mOhm) | 3.9@10V |
| Description |
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